Symbol. Parameter. Value. Unit. IRF IRFFP. VDS. Drain-source Voltage ( VGS = 0). V. VDGR. Drain-gate Voltage (RGS = 20 kΩ). V. VGS. IRF/IRFS are N-Channel enhancement mode power MOSFETs with advanced technology. These power MOSFETs are designed for low voltage. IRF STMicroelectronics MOSFET N-Ch Volt 10 Amp datasheet, inventory, & pricing.
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IRF Datasheet catalog
Drain-Source Body Diode Characteristics. Zero Gate Voltage Drain Current. L S die contact. The maximum ratings related to soldering conditions are also marked on the inner box label. Gate charge test circuit Figure Pulsed Diode Forward Current a. The TOAB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W.
Case-to-Sink, Flat, Greased Surface. N-channel V – 0.
Body Diode Reverse Recovery Time. Download datasheet Kb Share this page. The low thermal resistance and low package cost of the TOAB contribute to its wide acceptance throughout the industry.
Test circuit for inductive load switching and diode recovery times Figure View PDF for Mobile. Continuous Source-Drain Diode Current.
Switching times test circuit for resistive load Figure Unclamped inductive waveform Figure Elcodis is a trademark of Elcodis Company Ltd. Pulse width limited by safe operating area 2. Thermal impedance for TO Figure 4. Static drain-source on resistance Figure Pulsed Drain Current a. Gate charge vs gate-source voltage Figure This datasheet is subject to irf30 without notice.
These packages have a Lead-free second level interconnect. Repetitive rating; pulse width limited by maximum junction temperature see fig. Electrical characteristics Figure Unclamped Inductive load test circuit Figure All other trademarks are the property of their respective owners.
IRF datasheet and specification datasheet Download datasheet. The low thermal resistance. Contents Contents 1 Electrical ratings.
STMicroelectronics IRF – PDF Datasheet – MOSFET In Stock |
Repetitive Avalanche Energy a. I SM p – n junction diode. Vishay Intertechnology Electronic Components Datasheet. IRF datasheet and specification datasheet. Repetitive Avalanche Current a. V DS Temperature Coefficient.
Prev Next General features. Body Diode Reverse Recovery Charge. Safe operating area for TO Figure 3. Copy your embed code and put on your site: Operating Junction and Storage Temperature Range. Single Pulse Avalanche Energy b. Capacitance variations Figure The TOAB package is universally preferred for all.