AT45DB642D DATASHEET PDF

Please refer to data sheets for detailed information. To select how PB3 and PB4 should be used, the jumpers labeled PB3 and PB4 must be set correctly. Description. The AT45DBD is a volt, dual-interface sequential access Flash memory ideally suited for a wide variety of digital voice-, image-, program. Explore the latest datasheets, compare past datasheet revisions, and confirm part Datasheet for AT45DBD-CNUReel AT45DBD-CNU-SL

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Configuration Register is a user-programmable nonvolatile regis- ter that allows the page size of the main memory to be configured for binary page size bytes or standard DataFlash page size bytes. The device density is indicated using bits and 2 of the status register. For the AT45DBD, the four bits are The decimal value of these four binary bits does not equate to the device density; datasheeet four bits represent a combinational code relating to differing densities of DataFlash devices Unless otherwise specified tolerance: Master clocks in BYTE a.

Manufacturer ID codes that are two, three or even four bytes long with the first byte s in the sequence being 7FH.

Page 53 Packaging Information Utilizing the RapidS To take advantage of the RapidS function’s ability to operate at higher clock frequencies, a full clock cycle must be used to transmit data back and forth across the serial bus.

Elcodis is a trademark of Elcodis Company Ltd. Master clocks in BYTE h last output byte. Parts ordered with datazheet SL are shipped in bulk with the page size set to bytes.

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AT45DBD datasheet & applicatoin notes – Datasheet Archive

The surface finish of the package shall be EDM Charmille All program operations to the DataFlash occur on a page by page basis The device operates from a single power supply, 2.

The busy status indicates that the Flash memory array and one of the buffers cannot be accessed; read and write operations to the other buffer can still be performed. The status of whether or not sector protection has been enabled or disabled by either the software or the hardware controlled methods can be deter- mined by checking the Status Register.

Low-power applications may choose to wait until 10, cumulative page erase and program operations have accumulated before rewriting all pages of the sector. Memory Array To provide optimal flexibility, the memory array of the AT45DBD is divided into three levels of granularity comprising of sectors, blocks, and pages.

Being able to reprogram the Sector Protection Register with the sector protection enabled allows the user to temporarily disable the sector protection to an individual sector rather than dis- abling sector protection completely. Page 21 Figure PUW Changed t from max The algorithm above shows the programming of a single page.

The shipping carrier option is not marked on the devices. Datashwet will have a or SL marked on them Page 13 Software Sector Protection 8. This type of algorithm is used for applications in which the entire array is programmed sequentially, filling the array page-by- page page can be written using either a Main Memory Page Program operation or a Buffer Write operation followed by a Buffer to Main Memory Page Program operation. The algorithm will be repeated sequentially for each page within the entire array.

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Output Test Load The DataFlash is designed to VCSL Changed t from max. Deep Power-down, the device will return to the normal standby mode.

The user is able to configure these parts to a byte page size if desired. The entire main memory can be erased at one time by using the Chip Erase command. The information in this document is provided in connection with Atmel products. The Sector Protection Register can be reprogrammed while the sector protection enabled or dis- abled. All other trademarks are the property of their respective owners. Standard parts are shipped with the page size set to bytes.

AT45DB642D Datasheet PDF

No license, express or implied, by estoppel or otherwise, to any dahasheet property right is granted by this document or in connection with the sale of Atmel products. Dimensions D1 and E do not include mold protrusion.

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